各位老师，同学，大家好：
应实验室邀请，新加坡 Data Storage Institute魏青松博士将访问实验室，并做学术交流，欢迎各位老师和同学参加。
时间：2012年12月11日（周二）下午2：30
地点：光电实验室A302
报告题目：Research on Non-volatile Memory

相关学术报告信息：
Abstract:
I will give a quick overview of Non-volatile Memory (NVM). Flash Memory, Phase Change Memory, Resistive Memory and Spin-Transfer Torque MRAM are typical NVM candidates. NVM has features of disk-like persistency and DRAM-like performance.
Then, I will talk about buffer management for Solid State Drive (SSD). Random writes limit the application of SSD in enterprise environment due to its poor latency, shorten lifetime and high garbage collection overhead. SSD uses a small part of memory as buffer to reduce random write and extend lifetime. Existing block-based buffer management schemes exploit spatial locality to improve the write sequentiality at a cost of low buffer hit ratio. I will talk about a novel Popularity-Aware Buffer Management, which adopts both buffer hit ratio and write sequentiality as design objectives.

Bio:
Qingsong Wei received his B.S. in applied computer and M.S. in signal and information process from Chengdu University of Technology, China in 1995 and 2001 respectively, and Ph.D. in computer science from University of Electronic Science and Technologies of China in 2004. He was with Tongji University as lecturer from 2004 to 2005. He is currently with the Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore, as a Research Scientist II. His main stream research interests include Distributed Storage System, Operating System and Non-volatile Memory Technologies. He has published over 40 papers in high-quality International Journals and Conferences. Dr. Wei is a member of IEEE.